Advances in Electrochemical Science and Engineering Volume 3 by Richard C. Alkire, Dieter M. Kolb, Heinz Gerischer, Charles

By Richard C. Alkire, Dieter M. Kolb, Heinz Gerischer, Charles W. Tobias

Like its predecessors, quantity 3 of this in the meantime well-established sequence covers chosen issues from electrochemical technological know-how and its purposes. The authors were conscientiously chosen one of the leaders within the respective fields. Their authoritative and finished contributions signify the newest cutting-edge. distinct cognizance is paid to fresh advancements, that are severely and punctiliously mentioned. every one contribution of the current quantity keeps the excessive criteria of this sequence. This new sequence has been warmly welcomed by means of scientists world-wide, that is mirrored via the subsequent overview of the second one quantity: 'All the contributions during this quantity are good as much as the normal of this glorious sequence and may be of significant price to electrochemists... The editors back need to be congratulated in this tremendous choice of reviews.' magazine of Electroanalytical Chemistry and Interfacial Chemistry

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Ref. [89]). This model also explains the large discrepancies in the photoetching rates that are often observed between different experiments; these rates are indeed dependent on experimental parameters, such as the ratio of dark to illuminated surface area, coverage or exposure of the rear surface, etc. [87]. 3 Chemical Etching As stated in Sec. 1, valuable information on the mechanism of chemical etching processes can similarly be obtained by studying the electrochemical behavior of the interface.

01 mol I-* Ce(SO,), + 4 rnol 1-l H,S04. 5 mol . 1-1 LiC1. (b) (- &/is) as a function of - i, at an n-GaP/Ce4+electrode. Same data and notation as in Fig. S(aj. (c) i, as a function of fiat an n-GaP/Ce4+ electrode in different aqueous electrolytes. 5 rnol 1-1 LiCl. 5 mol * 1-1 LiC1. (64), by permission of Elsevier Sequoia). - . \ -!! 4 1 ' ! 4 - i,/ mA * crn-2 30 3 25 26 W. P. 4 Other Approaches to the Investigation of Anodic Dissolution Kinetics and Mechanisms An interesting theoretical analysis has recently been performed [65] on the relationship between the rest potential of n-type semiconductors and the hole injection rate, leading to the conclusion that the experimental study of this relationship may yield information on the dissolution mechanism of the semiconductor, similar to that obtained from electron excitation studies.

Accordingly, in the case of etching of n-InP by HCl, anodic electron injection by decomposition intermediates is not observed [92], so that a concerted bondexchange mechanism seems more likely for these reactions. 1 (Photo)anodic Etching In order to discuss the correlation between etching kinetics and etching morphology, let us first reconsider the current-potential characteristics of 111-V semiconductors, as depicted in Fig. 1. For the sake of clarity, the behavior in alkaline solutions (Fig. 1 (b)) is treated first.

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